UBS said Samsung Electronics will take the top spot in the HBM market next year with a 41% share, overtaking SK Hynix at 39%.
UBS said Samsung Electronics rose to the lead in the HBM market by becoming the first in the industry to mass-produce HBM4 and sharply expanding production capacity.
UBS said global DRAM bit demand growth will accelerate to 36% next year from 22% this year, while NAND flash demand growth will rise to 23% from 20%.
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Samsung Electronics headquarters in Seoul’s Seocho-dong. Photo: Kim Beom-jun, Korea Economic Daily
Samsung Electronics is set to overtake SK Hynix as the top player in the high-bandwidth memory, or HBM, market next year, according to UBS.
In a report published on July 30, UBS said SK Hynix would remain the leader this year with a 48% share of HBM bit shipments. In 2027, however, Samsung is projected to take a 41% share, narrowly ahead of SK Hynix at 39%. Micron’s share was forecast at 20%.
UBS attributed Samsung’s rise to its lead in sixth-generation HBM4. Samsung became the first company in the industry to ship mass-produced HBM4 products in February and has rapidly caught up with SK Hynix by sharply expanding production capacity.
UBS added that the change at the top does not signal slowing growth for SK Hynix. The bank expects global DRAM bit demand growth to accelerate to 36% next year from 22% this year, while NAND flash demand growth is forecast to rise to 23% from 20% over the same period.
Kim Chae-yeon, Korea Economic Daily reporter why29@hankyung.com