{"id":563719,"date":"2026-07-01T16:50:13","date_gmt":"2026-07-01T16:50:13","guid":{"rendered":"https:\/\/www.europesays.com\/ie\/563719\/"},"modified":"2026-07-01T16:50:13","modified_gmt":"2026-07-01T16:50:13","slug":"quantum-tunnelling-and-leakage-current-across-two-dimensional-materials","status":"publish","type":"post","link":"https:\/\/www.europesays.com\/ie\/563719\/","title":{"rendered":"Quantum tunnelling and leakage current across two-dimensional materials"},"content":{"rendered":"
  • \n

    Backes, C. et al. Production and processing of graphene and related materials. 2D Mater. 7<\/b>, 022001 (2020).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Chung, Y.-Y. et al. First demonstration of GAA monolayer-MoS2 nanosheet nFET with 410\u03bcA \u03bcm ID 1V VD at 40nm gate length. In Proc. IEEE International Electron Devices Meeting 34.5.1\u201334.5.4 (IEEE, 2022); https:\/\/doi.org\/10.1109\/IEDM45625.2022.10019563<\/a><\/p>\n<\/li>\n

  • \n

    O\u2019Brien, K. P. et al. Process integration and future outlook of 2D transistors. Nat. Commun. 14<\/b>, 6400 (2023).<\/p>\n

    Article<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n     PubMed Central<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Smets, Q. et al. Sources of variability in scaled MoS2 FETs. In Proc. IEEE International Electron Devices Meeting 3.1.1\u20133.1.4 (IEEE, 2020); https:\/\/doi.org\/10.1109\/IEDM13553.2020.9371890<\/a><\/p>\n<\/li>\n

  • \n

    International Roadmap for Devices and Systems: 2022 Update\u2014More Moore (IEEE, 2022); https:\/\/irds.ieee.org\/editions<\/a><\/p>\n<\/li>\n

  • \n

    Semiconductor Research Corporation. The Decadal Plan for Semiconductors (Semiconductor Research Corporation, 2024); https:\/\/www.src.org\/about\/decadal-plan\/<\/a><\/p>\n<\/li>\n

  • \n

    Robertson, J. & Wallace, R. M. High-K materials and metal gates for CMOS applications. Mater. Sci. Eng R Rep. 88<\/b>, 1\u201341 (2015).<\/p>\n

    Article<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Zhu, K. et al. Hybrid 2D\u2013CMOS microchips for memristive applications. Nature 618<\/b>, 57\u201362 (2023).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n     PubMed Central<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Britnell, A. et al. Electron tunneling through ultrathin boron nitride crystalline barriers. Nano Lett. 12<\/b>, 1707\u20131710 (2012).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Wu, X. et al. Thinnest nonvolatile memory based on monolayer h-BN. Adv. Mater. 31<\/b>, 1806790 (2019).<\/p>\n

    Article<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Kim, M. et al. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems. Nat. Electron. 3<\/b>, 479\u2013485 (2020).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Ge, J. et al. A sub-500 mV monolayer hexagonal boron nitride based memory device. Mater. Des. 198<\/b>, 109366 (2021).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Ge, R. et al. A library of atomically thin 2D materials featuring the conductive-point resistive switching phenomenon. Adv. Mater. 33<\/b>, 2007792 (2021).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Wu, X., Ge, R., Kim, M., Akinwande, D. & Lee, J. C. Atomristors: non-volatile resistance switching in 2D monolayers. In Proc. Pan Pacific Symposium (Surface Mount Technology Association, 2020); https:\/\/doi.org\/10.37665\/ppHOFWA56362<\/a><\/p>\n<\/li>\n

  • \n

    Li, Y., Cui, Z., He, Y., Tian, H. & Tian, T. Resistive switching properties of monolayer h-BN atomristors with different electrodes. Appl. Phys. Lett. 120<\/b>, 173504 (2022).<\/p>\n<\/li>\n

  • \n

    Yang, S. J. et al. Reconfigurable low-voltage hexagonal boron nitride nonvolatile switches for millimeter-wave wireless communications. Nano Lett. 23<\/b>, 1152\u20131158 (2023).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Yang, S. J. et al. Volatile and nonvolatile resistive switching coexistence in conductive point hexagonal boron nitride monolayer. ACS Nano 18<\/b>, 3313\u20133322 (2024).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Yang, S. J. et al. Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor. npj 2D Mater. Appl. 9<\/b>, 9 (2025).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Yuan, Y. et al. On-chip atomristors. Mater. Sci. Eng R Rep. 165<\/b>, 101006 (2025).<\/p>\n

    Article<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Ge, R. et al. Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides. Nano Lett. 18<\/b>, 434\u2013441 (2018).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Kim, M. et al. Zero-static power radio-frequency switches based on MoS2 atomristors. Nat. Commun. 9<\/b>, 2524 (2018).<\/p>\n

    Article<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n     PubMed Central<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Wu, X., Ge, R., Akinwande, D. & Lee, J. C. Understanding of multiple resistance states by current-sweep measurement and compliance current modulation in 2D MoS2-based non-volatile resistance switching devices. In Proc. Device Research Conference 1\u20132 (IEEE, 2020); https:\/\/doi.org\/10.1088\/1361-6528\/aba46a<\/a><\/p>\n<\/li>\n

  • \n

    Ge, R. et al. Atomristors: memory effect in atomically-thin sheets and record RF switches. In Proc. IEEE International Electron Devices Meeting 22.6.1\u201322.6.4 (IEEE, 2018); https:\/\/doi.org\/10.1109\/IEDM.2018.8614602<\/a><\/p>\n<\/li>\n

  • \n

    Lo, S. H. et al. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET\u2019s. IEEE Electron Device Lett. 18<\/b>, 209\u2013211 (1997).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Kim, W.-B., Matsumoto, T. & Kobayashi, H. Ultrathin SiO2 layer with an extremely low leakage current density formed in high concentration nitric acid. J. Appl. Phys. 105<\/b>, 103709 (2009).<\/p>\n<\/li>\n

  • \n

    Green, M. L. et al. Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS. Microelectron. Eng 48<\/b>, 25\u201330 (1999).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Cabanillas, A. et al. Enormous out-of-plane charge rectification and conductance through two-dimensional monolayers. ACS Nano 19<\/b>, 3865\u20133877 (2025).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Chiu, F. C. A review on conduction mechanisms in dielectric films. Adv. Mater. Sci. Eng 2014<\/b>, 578168 (2014).<\/p>\n<\/li>\n

  • \n

    Tsu, R. & Esaki, L. Tunneling in a finite superlattice. Appl. Phys. Lett. 22<\/b>, 562\u2013564 (1973).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Knobloch, T. et al. The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials. Nat. Electron. 4<\/b>, 98\u2013108 (2021).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Feenstra, R. M. et al. Magnitude of the current in 2D interlayer tunneling devices. J. Phys. Condens. Matter 30<\/b>, 055703 (2018).<\/p>\n

    Article<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Ducry, F. et al. An ab initio study on resistance switching in hexagonal boron nitride. npj 2D Mater. Appl. 6<\/b>, 58 (2022).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Weber, J. et al. Current-limited conductive atomic force microscopy. ACS Appl. Mater. Interfaces 15<\/b>, 56365\u201356374 (2023).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Wang, B. et al. Experimental observation and mitigation of dielectric screening in hexagonal boron nitride based resistive switching devices. Cryst. Res. Technol. 53<\/b>, 1800006 (2018).<\/p>\n

    Article<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Xiao, Y. et al. Highly accurate thickness determination of 2D materials. Cryst. Res. Technol. 56<\/b>, 2100056 (2021).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Zheng, W. et al. The origin and mitigation of defects induced by metal evaporation in 2D materials. Mater. Sci. Eng R Rep. 160<\/b>, 100831 (2024).<\/p>\n

    Article<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Yuan, Y. et al. On the quality of commercial chemical vapour deposited hexagonal boron nitride. Nat. Commun. 15<\/b>, 4518 (2024).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n     PubMed Central<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Yuan, Y. & Lanza, M. The effect of relative humidity in conductive atomic force microscopy. Adv. Mater. 36<\/b>, 2405932 (2024).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n     PubMed Central<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Simmons, J. G. Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film. J. Appl. Phys. 34<\/b>, 1793\u20131803 (1963).<\/p>\n

    Article<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Matthews, N., Hagmann, M. J. & Mayer, A. Comment: \u2018generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film\u2019 [J. Appl. Phys. 34, 1793 (1963)]. J. Appl. Phys. 123<\/b>, 136101 (2018).<\/p>\n<\/li>\n

  • \n

    Ottone, C. et al. The effects of the film thickness and roughness in the anodization process of very thin aluminum films. J. Mater. Sci. Nanotechnol. 1<\/b>, S107 (2014).<\/p>\n


    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Nutsch, A. & Pfitzner, L. Chemical mechanical planarization (CMP) metrology for 45\/32 nm technology generations. AIP Conf. Proc. 931<\/b>, 173\u2013177 (AIP, 2007).<\/p>\n<\/li>\n

  • \n

    Zhang, L. et al. Polishing mechanisms of various surfactants in chemical mechanical polishing relevant to cobalt interconnects. Int. J. Adv. Manuf. Technol. 128<\/b>, 5425\u20135436 (2023).<\/p>\n

    Article<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Babich, I. et al. Polymer-free van der Waals assembly of 2D material heterostructures using muscovite crystals. Nat. Commun. https:\/\/doi.org\/10.1038\/s41467-026-72554-x<\/a> (2026).<\/p>\n<\/li>\n

  • \n

    Ginestra\u2122 Simulation Platform. Applied Materials https:\/\/www.appliedmaterials.com\/sg\/en\/semiconductor\/ginestra-software.html<\/a> (2025).<\/p>\n<\/li>\n

  • \n

    Wickramaratne, D., Weston, L. & Van de Walle, C. G. Monolayer to bulk properties of hexagonal boron nitride. J. Phys. Chem. C 122<\/b>, 25524\u201325529 (2018).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Smidstrup, S. et al. QuantumATK: an integrated platform of electronic and atomic-scale modelling tools. J. Phys. Condens. Matter 32<\/b>, 015901 (2020).<\/p>\n

    Article<\/a>\u00a0
    \n     CAS<\/a>\u00a0
    \n     PubMed<\/a>\u00a0
    \n
    \n Google Scholar<\/a>\u00a0\n <\/p>\n<\/li>\n

  • \n

    Kresse, G. & Furthm\u00fcller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6<\/b>, 15\u201350 (1996).<\/p>\n<\/li>\n","protected":false},"excerpt":{"rendered":"Backes, C. et al. Production and processing of graphene and related materials. 2D Mater. 7, 022001 (2020). Article\u00a0…\n","protected":false},"author":2,"featured_media":563720,"comment_status":"","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"footnotes":"","_share_on_mastodon":"0"},"categories":[271],"tags":[912,914,18,17340,7647,910,19,17,909,913,911,452,133,9290],"class_list":["post-563719","post","type-post","status-publish","format-standard","has-post-thumbnail","category-physics","tag-biomaterials","tag-condensed-matter-physics","tag-eire","tag-electronic-devices","tag-electronic-properties-and-materials","tag-general","tag-ie","tag-ireland","tag-materials-science","tag-nanotechnology","tag-optical-and-electronic-materials","tag-physics","tag-science","tag-two-dimensional-materials"],"share_on_mastodon":{"url":"","error":""},"_links":{"self":[{"href":"https:\/\/www.europesays.com\/ie\/wp-json\/wp\/v2\/posts\/563719","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.europesays.com\/ie\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.europesays.com\/ie\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.europesays.com\/ie\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.europesays.com\/ie\/wp-json\/wp\/v2\/comments?post=563719"}],"version-history":[{"count":0,"href":"https:\/\/www.europesays.com\/ie\/wp-json\/wp\/v2\/posts\/563719\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.europesays.com\/ie\/wp-json\/wp\/v2\/media\/563720"}],"wp:attachment":[{"href":"https:\/\/www.europesays.com\/ie\/wp-json\/wp\/v2\/media?parent=563719"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.europesays.com\/ie\/wp-json\/wp\/v2\/categories?post=563719"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.europesays.com\/ie\/wp-json\/wp\/v2\/tags?post=563719"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}