As chipmakers push EUV lithography toward its physical limits at 2nm and below, the advanced chemicals used to pattern those circuits have become a critical bottleneck. Photoresists, the light-sensitive materials that transfer circuit designs onto silicon wafers, must be reformulated for each new process node, and the most advanced EUV-grade resists are produced almost exclusively by a handful of Japanese suppliers. With AI chip demand driving record orders at leading foundries, those suppliers are now racing to build production capacity closer to their biggest customers.

JSR, the Japanese chemical maker that holds roughly a quarter of the global photoresist market, established a joint venture with Taiwanese partners Wah Lee Industrial and LCY Chemical in early April to build its first photoresist production facility in Taiwan. The plant, located in Yunlin County, is expected to come online as early as 2028 and will co-develop advanced photoresists with TSMC, ending the company’s status as the last of Japan’s three leading EUV-class resist suppliers without a Taiwanese manufacturing base.

Latest Videos From

You may like

adjusting oxygen concentration during the post-exposure bake step.

JSR’s MOR production plant in Cheongju, South Korea, built through its JSR Micro Korea subsidiary, is expected to begin mass production this year, supplying Samsung Electronics and SK hynix with tin-based MOR for EUV layers in next-gen DRAM. Both memory makers are reportedly planning to adopt MOR on selected layers for their 1c (sixth-gen 10nm-class) DRAM nodes.

JSR plans to market MOR to TSMC as well, according to Nikkei. TSMC has stated repeatedly that it won’t adopt high-NA EUV through its A14 (1.4nm-class) node in 2028, instead extending low-NA with multi-patterning, which pushes the largest MOR opportunity at TSMC’s logic fabs out toward 1.0nm-class processes and beyond.

KrF and i-line level, but penetration at ArF and above remains negligible. Domestic Chinese supply of ArF and EUV resist sits below 5%.

The names to watch are Hubei Dinglong, Xuzhou B&C Chemical (backed by Huawei’s Hubble Investment arm), Jiangsu Nata Optoelectronic, and Shanghai Sinyang. Xuzhou B&C claimed it achieved a 14nm wet-process photoresist breakthrough in 2024 and targets advanced mass production within five years, according to TrendForce, but analysts view that timeline as optimistic given the multi-year customer-qualification cycles that resist adoption requires.

“Chinese players are a threat, but it’ll still be some time before they can catch up with us and take market share,” Toru Kimura, a senior officer at JSR who heads the company’s electronic materials business, told Nikkei. Specific capacity figures, the output mix between MOR and conventional resists, and the exact scope of the Yunlin plant haven’t been disclosed.