SK hynix’s HBM4E. Photo courtesy of SK hynix
SK hynix (000660.KS) has begun supplying samples of its seventh-generation high-bandwidth memory (HBM4E) for use in Nvidia’s next-generation, ultra-high-performance artificial intelligence (AI) accelerators. As the leader in the HBM market, SK hynix aims to further strengthen its dominance in the AI memory chip market by leveraging proven technology and stable mass-production capabilities.
SK hynix said Wednesday that it had supplied 12-layer HBM4E samples to major customers. HBM4E is a new ultra-high-performance memory product to be installed in next-generation AI chips from global big tech companies, including Nvidia’s “Rubin Ultra” AI accelerator next year.
HBM4E is made by stacking 10-nanometer-class sixth-generation (1c) DRAM. The 1c DRAM is produced using a finer process than the fifth-generation (1b) DRAM applied in HBM4, delivering further improved performance. Data processing speed reaches up to 16 Gbps (gigabits per second), more than 30% faster than HBM4’s 11.7 Gbps, while energy efficiency has improved by more than 20%. Thermal resistance, which affects heat generation, was reduced by 17%. Capacity is 48 GB (gigabytes) based on the 12-layer configuration.
SK hynix explained, “Through the latest interfaces and design optimization, we have reduced data transmission latency and achieved stable operation even in high-bandwidth environments,” adding, “We expect this to further raise the processing efficiency of next-generation AI data centers and large-scale computing systems.”
With SK hynix beginning to ship HBM4E samples, competition with Samsung Electronics (005930.KS) over next-generation AI accelerator memory is also intensifying. Samsung Electronics supplied HBM4E samples to major customers last month, threatening SK hynix’s top position in the HBM market. Samsung’s HBM4E applies a 4-nm foundry process—ahead of SK hynix’s—to the base die forming the bottom layer. In response, SK hynix has shipped its HBM4E samples to counter the move.
According to market research firm Counterpoint Research, SK hynix’s HBM market share in the first quarter of this year was 58%, far ahead of Samsung Electronics’ 21%. However, compared with the same quarter last year, when SK hynix held 69% and Samsung Electronics held 13%, the gap between the two companies has narrowed. As a result, competition over the next-generation HBM market is expected to grow even fiercer.
Meanwhile, SK hynix is strengthening its AI chip “triangular alliance” as SK Group Chairman Tae-won Choi personally meets with the heads of global big tech companies such as Nvidia and TSMC in succession. Earlier this month, Chairman Choi attended “Computex Taipei 2026” in Taiwan, where he met with Nvidia CEO Jensen Huang and TSMC Chairman C.C. Wei to discuss ways to strengthen AI memory cooperation. He also held a “samso (samgyeopsal and soju)” gathering with CEO Huang during the latter’s visit to Korea, displaying their friendship while signing a partnership in the AI factory sector.