{"id":109369,"date":"2026-08-05T02:26:18","date_gmt":"2026-08-05T02:26:18","guid":{"rendered":"https:\/\/www.europesays.com\/korea\/109369\/"},"modified":"2026-08-05T02:26:18","modified_gmt":"2026-08-05T02:26:18","slug":"samsung-is-back-zhbm-delivers-8x-hbm5-performance-breaks-ai-memory-limits","status":"publish","type":"post","link":"https:\/\/www.europesays.com\/korea\/109369\/","title":{"rendered":"“Samsung Is Back”: zHBM Delivers 8x HBM5 Performance, Breaks AI Memory Limits"},"content":{"rendered":"

\"KimKim Kyung-ryun, vice president of Samsung Electronics’ DRAM Development Division, gives a presentation at “FMS 2026” held in Silicon Valley, U.S., on the 4th (local time). Samsung Electronics\"AA Samsung Electronics zHBM mockup is displayed at “FMS 2026” held in Silicon Valley, U.S., on the 4th (local time). Samsung Electronics<\/p>\n

“Samsung is back.”<\/p>\n

Samsung Electronics unveiled a next-generation three-dimensional (3D) memory architecture designed to overcome the performance and power-efficiency limits of artificial intelligence (AI) chips, signaling confidence in its “technology lead.” The new architecture breaks from the conventional method of placing memory horizontally beside an AI accelerator, instead stacking memory directly on top of the chip. The concept aims to resolve the memory bottleneck that has been cited as an obstacle to scaling AI infrastructure.<\/p>\n

Samsung Electronics (005930.KS) presented its next-generation 3D memory, z High Bandwidth Memory (HBM) and zNAND-O, for the first time in the industry at FMS (Future of Memory and Storage) 2026, a memory exhibition held in Santa Clara, California, on the 4th.<\/p>\n

In a keynote speech, Kim Kyung-ryun, vice president of Samsung Electronics’ DRAM Development Lab, focused on introducing zHBM, the next-generation 3D architecture. Rather than the two-dimensional plane of width and length (X and Y axes), zHBM uses height (Z axis) to stack HBM vertically on top of an AI accelerator. The “z” in the product name refers to the vertical direction. The key is to minimize the distance between the accelerator and the memory to reduce the data bottleneck. Introducing zHBM, Kim also expressed confidence, remarking, “Samsung is back.”<\/p>\n

Applying zHBM improves performance per graphics processing unit (GPU) by up to eight times compared with HBM5, the next-generation standard. Performance per watt improves by up to three times. By applying a new heat-dissipation structure technology (HPB) to the side of the core die, thermal resistance was also lowered by more than half compared with HBM5 (the 8th generation). “With the existing packaging structure, there are limits to narrowing the physical distance between the accelerator chip and the memory,” Kim said. “We will overcome this barrier by implementing gate-all-around (GAA) transistors in HBM for the first time and introducing a 2nm (nanometer, one-billionth of a meter) ultra-fine foundry process.”<\/p>\n

\"LeeLee Jin-yeop, executive vice president of Samsung Electronics’ Flash Development Division, gives a presentation at “FMS 2026” held in Silicon Valley, U.S., on the 4th (local time). Samsung Electronics<\/p>\n

zNAND-O, a next-generation NAND solution tailored for on-device AI environments, was also introduced. “When running a GPT model with 120 billion parameters, zNAND-O recorded the same data (token) processing speed as an existing DRAM server, while its operating cost was only one-sixth,” said Lee Jin-yup, executive vice president of Samsung Electronics’ Flash Development Lab. During the keynote, Lee demonstrated the ultra-compact enterprise SSD (eSSD) “BM1773” in person, noting the characteristics of high-value-added memory: “This one small storage chip is worth as much as a top-of-the-line sedan.”<\/p>\n

Samsung also unveiled the industry’s first 10th-generation V-NAND, “V10 BV-NAND,” which vertically stacks more than 400 layers. By applying wafer bonding technology, in which cells and circuits are manufactured separately and then vertically joined, it improved memory density by about 58% compared with the previous generation (V9).<\/p>\n

According to market research firm TrendForce, as of the first quarter of this year, Samsung Electronics held a 38.5% share of the global DRAM market and a 31.6% share of the NAND flash market, ranking first in each. Samsung Electronics plans to provide the market with a one-stop solution that combines these memory market shares with logic, foundry, and advanced packaging capabilities. It plans to provide integrated support from the product design stage through mass production to shorten development periods and optimize performance, actively responding to growing demand for high-performance computing and AI infrastructure.<\/p>\n

\"TheThe 10th-generation V-NAND “V10 BV-NAND,” vertically stacked in more than 400 layers. Samsung Electronics\"TheThe 10th-generation V-NAND “V10 BV-NAND,” vertically stacked in more than 400 layers. Samsung Electronics\"TheThe 10th-generation V-NAND “V10 BV-NAND,” vertically stacked in more than 400 layers. Samsung Electronics\"AA Samsung Electronics zNAND-O mockup is displayed at “FMS 2026” held in Silicon Valley, U.S., on the 4th (local time). Samsung Electronics\"AA view of the Samsung Electronics booth at “FMS 2026” held in Silicon Valley, U.S., on the 4th (local time). Samsung Electronics\"AA view of the Samsung Electronics booth at “FMS 2026” held in Silicon Valley, U.S., on the 4th (local time). Samsung Electronics<\/p>\n","protected":false},"excerpt":{"rendered":"Kim Kyung-ryun, vice president of Samsung Electronics’ DRAM Development Division, gives a presentation at “FMS 2026” held in…\n","protected":false},"author":2,"featured_media":109370,"comment_status":"","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[18],"tags":[56237,9049,55626,19855,127,276,19316,55624,56124],"class_list":["post-109369","post","type-post","status-publish","format-standard","has-post-thumbnail","category-samsung-electronics","tag-3d-memory","tag-ai-memory","tag-fms-2026","tag-hbm5","tag-samsung","tag-samsung-electronics","tag-v-nand","tag-zhbm","tag-znand-o"],"_links":{"self":[{"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/posts\/109369","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/comments?post=109369"}],"version-history":[{"count":0,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/posts\/109369\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/media\/109370"}],"wp:attachment":[{"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/media?parent=109369"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/categories?post=109369"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/tags?post=109369"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}