![\"The](\"https:\/\/www.europesays.com\/korea\/wp-content\/uploads\/2026\/08\/news-p.v1.20260807.961beb5c1ce744e18d8f482b5154ef04_P1.jpg\"\/ "\\"Samsung,")
The crystal structure of a 155-layer NAND with improved performance developed by a joint Samsung Electronics-POSTECH research team using silicon crystal growth control technology. Photo courtesy of POSTECH![\"Hwang](\"https:\/\/www.europesays.com\/korea\/wp-content\/uploads\/2026\/08\/news-p.v1.20260807.18d65820e037499e856da7777c27c49c_P2.jpg\"\/ "\\"Samsung,")
Hwang Hyun-sang, professor of materials science and engineering and semiconductor engineering at POSTECH. Photo courtesy of POSTECH<\/p>\n
Samsung Electronics (005930.KS) and a joint research team from POSTECH have developed a core technology to realize ultra-high-layer NAND flash memory stacked hundreds of layers high. As competition intensifies among memory makers over ultra-high-layer NAND capable of holding surging artificial intelligence (AI) data, Samsung Electronics is expected to strengthen its leadership through this achievement.<\/p>\n
Samsung Electronics said on the 7th that a joint research team, comprising its Semiconductor R&D Center and Memory Business Division along with Professor Hwang Hyun-sang of POSTECH’s Department of Materials Science and Engineering and Department of Semiconductor Engineering, developed a technology to control the growth direction of silicon crystals inside the channel of three-dimensional (3D) NAND. The research findings were presented at the “2026 IEEE Symposium on VLSI Technology and Circuits.”<\/p>\n
Samsung Electronics recently unveiled the industry’s first high-layer NAND with more than 400 layers, and competitors are also focusing on increasing the number of layers in their products to accommodate large volumes of AI data. However, stacking even more layers than at present requires solving the “silicon crystal” problem. Silicon consists of multiple small crystals, and at the boundaries between crystals, current does not flow smoothly. As the number of NAND layers increases, more boundaries form, amplifying the effect of disrupted current flow and ultimately leading to slower data processing speeds.<\/p>\n
The research team developed a proprietary technology that allows silicon crystals to grow uniformly in a single direction on a thin film made of nickel metal. When crystals grow uniformly in one direction, the number of boundaries decreases, allowing current to flow smoothly. The team applied this technology to an actual 155-layer NAND, succeeding in creating a uniform crystal structure that minimizes boundaries.<\/p>\n
The team plans to apply the new technology to existing mass-production processes for commercialization. “We have presented a practical solution that can uniformly crystallize the entire channel even in next-generation 3D NAND with increasing layer counts,” Professor Hwang said.<\/p>\n
![\"Samsung](\"https:\/\/www.europesays.com\/korea\/wp-content\/uploads\/2026\/08\/news-p.v1.20260807.fd754ad784bf4140aa0f5375e8c74abd_P1.png\"\/ "\\"Samsung,")
Samsung Electronics’ ninth-generation V-NAND (V9) product. Photo courtesy of Samsung Electronics<\/p>\n","protected":false},"excerpt":{"rendered":"The crystal structure of a 155-layer NAND with improved performance developed by a joint Samsung Electronics-POSTECH research team…\n","protected":false},"author":2,"featured_media":111889,"comment_status":"","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[17],"tags":[57393,57396,57397,9540,19234,127,276,223,57395,57394],"class_list":["post-111888","post","type-post","status-publish","format-standard","has-post-thumbnail","category-samsung","tag-3d-nand","tag-ai-data-storage","tag-ieee-vlsi-symposium","tag-memory-technology","tag-postech","tag-samsung","tag-samsung-electronics","tag-samsung-group","tag-silicon-crystal","tag-ultra-high-layer-nand"],"_links":{"self":[{"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/posts\/111888","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/comments?post=111888"}],"version-history":[{"count":0,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/posts\/111888\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/media\/111889"}],"wp:attachment":[{"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/media?parent=111888"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/categories?post=111888"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.europesays.com\/korea\/wp-json\/wp\/v2\/tags?post=111888"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}