Wang, H., Ralph, T. C., Renema, J. J., Lu, C.-Y. & Pan, J.-W. Scalable photonic quantum technologies. Nat. Mater. 24, 1883–1897 (2025).
Yin, J. et al. Satellite-based entanglement distribution over 1200 kilometers. Science 356, 1140–1144 (2017).
Wang, J., Sciarrino, F., Laing, A. & Thompson, M. G. Integrated photonic quantum technologies. Nat. Photon. 14, 273–284 (2020).
Lu, C.-Y. & Pan, J.-W. Quantum-dot single-photon sources for the quantum internet. Nat. Nanotechnol. 16, 1294–1296 (2021).
Uppu, R., Midolo, L., Zhou, X., Carolan, J. & Lodahl, P. Quantum-dot-based deterministic photon–emitter interfaces for scalable photonic quantum technology. Nat. Nanotechnol. 16, 1308–1317 (2021).
Azuma, K., Tamaki, K. & Lo, H.-K. All-photonic quantum repeaters. Nat. Commun. 6, 6787 (2015).
Borregaard, J. et al. One-way quantum repeater based on near-deterministic photon–emitter interfaces. Phys. Rev. X 10, 021071 (2020).
Kołodyński, J. et al. Device-independent quantum key distribution with single-photon sources. Quantum 4, 260 (2020).
PsiQuantum Team. A manufacturable platform for photonic quantum computing. Nature 641, 876–883 (2025).
Chan, M. L., Capatos, A. A., Lodahl, P., Sørensen, A. S. & Paesani, S. Practical blueprint for low-depth photonic quantum computing with quantum dots. Preprint at https://arxiv.org/abs/2507.16152 (2025).
De Leon, N. P. et al. Materials challenges and opportunities for quantum computing hardware. Science 372, eabb2823 (2021).
Lodahl, P., Mahmoodian, S. & Stobbe, S. Interfacing single photons and single quantum dots with photonic nanostructures. Rev. Mod. Phys. 87, 347 (2015).
Uppu, R., Midolo, L., Zhou, X., Carolan, J. & Lodahl, P. Scalable integrated single-photon source. Sci. Adv. 6, eabc8268 (2020).
Tomm, N. et al. A bright and fast source of coherent single photons. Nat. Nanotechnol. 16, 399–403 (2021).
Ding, X. et al. High-efficiency single-photon source above the loss-tolerant threshold for efficient linear optical quantum computing. Nat. Photon. 19, 387–391 (2025).
Alloing, B. et al. Growth and characterization of single quantum dots emitting at 1300 nm. Appl. Phys. Lett. 86, 101908 (2005).
Holewa, P. et al. Solid-state single-photon sources operating in the telecom wavelength range. Nanophotonics 14, 1729–1774 (2025).
Nawrath, C. et al. Bright source of Purcell-enhanced, triggered, single photons in the telecom C-band. Adv. Quantum Technol. 6, 2300111 (2023).
Joos, R. et al. Coherently and incoherently pumped telecom C-band single-photon source with high brightness and indistinguishability. Nano Lett. 24, 8626–8633 (2024).
Srocka, N. et al. Deterministically fabricated quantum dot single-photon source emitting indistinguishable photons in the telecom O-band. Appl. Phys. Lett. 116, 231104 (2020).
Komza, L. et al. Indistinguishable photons from an artificial atom in silicon photonics. Nat. Commun. 15, 6920 (2024).
Simmons, S. Scalable fault-tolerant quantum technologies with silicon color centers. PRX Quantum 5, 010102 (2024).
Ourari, S. et al. Indistinguishable telecom band photons from a single Er ion in the solid state. Nature 620, 977–981 (2023).
Zhao, H., Pettes, M. T., Zheng, Y. & Htoon, H. Site-controlled telecom-wavelength single-photon emitters in atomically-thin MoTe2. Nat. Commun. 12, 6753 (2021).
Borregaard, J., Sørensen, A. S. & Lodahl, P. Quantum networks with deterministic spin–photon interfaces. Adv. Quantum Technol. 2, 1800091 (2019).
Kuhlmann, A. V. et al. Transform-limited single photons from a single quantum dot. Nat. Commun. 6, 8204 (2015).
Manga Rao, V. & Hughes, S. Single quantum-dot purcell factor and β factor in a photonic crystal waveguide. Phys. Rev. B 75, 205437 (2007).
Nishi, K., Saito, H., Sugou, S. & Lee, J.-S. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates. Appl. Phys. Lett. 74, 1111–1113 (1999).
Seravalli, L. et al. Quantum dot strain engineering of InAs/InGaAs nanostructures. J. Appl. Phys. 101, 024313 (2007).
Vullum, P. E. et al. Quantitative strain analysis of InAs/GaAs quantum dot materials. Sci. Rep. 7, 45376 (2017).
Warburton, R. J. Single spins in self-assembled quantum dots. Nat. Mater. 12, 483–493 (2013).
Kuhlmann, A. V. et al. Charge noise and spin noise in a semiconductor quantum device. Nat. Phys. 9, 570–575 (2013).
Arcari, M. et al. Near-unity coupling efficiency of a quantum emitter to a photonic crystal waveguide. Phys. Rev. Lett. 113, 093603 (2014).
Zhou, X. et al. High-efficiency shallow-etched grating on GaAs membranes for quantum photonic applications. Appl. Phys. Lett. 113, 251103 (2018).
Wang, Y. et al. Electroabsorption in gated GaAs nanophotonic waveguides. Appl. Phys. Lett. 118, 131106 (2021).
Papon, C. et al. Independent operation of two waveguide-integrated quantum emitters. Phys. Rev. Appl. 19, L061003 (2023).
Tiranov, A. et al. Collective super- and subradiant dynamics between distant quantum emitters. Science 379, 389–393 (2023).
Nawrath, C. et al. Coherence and indistinguishability of highly pure single photons from non-resonantly and resonantly excited telecom C-band quantum dots. Appl. Phys. Lett. 115, 023103 (2019).
Albrechtsen, M. et al. Efficient and deterministic InAs/GaAs quantum dot single-photon source emitting directly in the original telecommunications band (O-band). In Proc. Frontiers in Optics + Laser Science 2024 (FiO, LS) FM5C-2 (Optica Publishing Group, 2024); https://doi.org/10.1364/FIO.2024.FM5C.2
Holewa, P. et al. High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band. Nat. Commun. 15, 3358 (2024).
Hauser, N. et al. Deterministic and highly indistinguishable single photons in the telecom C-band. Nat. Commun. 17, 537 (2026).
Wakileh, A. N. et al. Approaching transform-limited line widths in telecom-wavelength transitions of ungated quantum dots. ACS Photonics 13, 1591–1598 (2026).
Aghaee Rad, H. et al. Scaling and networking a modular photonic quantum computer. Nature 638, 912–919 (2025).
Da Lio, B. et al. A pure and indistinguishable single-photon source at telecommunication wavelength. Adv. Quantum Technol. 5, 2200006 (2022).
Kurzmann, A., Ludwig, A., Wieck, A. D., Lorke, A. & Geller, M. Auger recombination in self-assembled quantum dots: quenching and broadening of the charged exciton transition. Nano Lett. 16, 3367–3372 (2016).
Sund, P. I. et al. High-speed thin-film lithium niobate quantum processor driven by a solid-state quantum emitter. Sci. Adv. 9, eadg7268 (2023).
González-Ruiz, E. M., Bjerlin, J., Sandberg, O. A. D. & Sørensen, A. S. Two-photon correlations and Hong–Ou–Mandel visibility from an imperfect single-photon source. Phys. Rev. Appl. 23, 054063 (2025).
Zhang, J. et al. III-V-on-Si photonic integrated circuits realized using micro-transfer-printing. APL Photonics 4, 110803 (2019).
Davanco, M. et al. Heterogeneous integration for on-chip quantum photonic circuits with single quantum dot devices. Nat. Commun. 8, 889 (2017).
Salamon, H. et al. Electrical control of quantum dots in GaAs-on-insulator waveguides for coherent single-photon generation. Nano Lett. 25, 16366 (2025).
Bernal, S. et al. 12.1 terabit/second data center interconnects using O-band coherent transmission with QD-MLL frequency combs. Nat. Commun. 15, 7741 (2024).
Ottaviano, L., Pu, M., Semenova, E. & Yvind, K. Low-loss high-confinement waveguides and microring resonators in AlGaAs-on-insulator. Opt. Lett. 41, 3996–3999 (2016).
Chang, L. et al. Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators. Nat. Commun. 11, 1331 (2020).
Sprengers, J. et al. Waveguide superconducting single-photon detectors for integrated quantum photonic circuits. Appl. Phys. Lett. 99, 181110 (2011).
Zahidy, M. et al. Quantum key distribution using deterministic single-photon sources over a field-installed fibre link. npj Quantum Inf. 10, 2 (2024).
Ludwig, A. et al. Ultra-low charge and spin noise in self-assembled quantum dots. J. Cryst. Growth 477, 193–196 (2017).
Nguyen, G. et al. Influence of molecular beam effusion cell quality on optical and electrical properties of quantum dots and quantum wells. J. Cryst. Growth 550, 125884 (2020).
Coleiny, G. & Venkat, R. Theoretical study of in desorption during MBE growth of InGaAs/GaAs. J. Cryst. Growth 250, 22–28 (2003).
Liang, S., Zhu, H. L. & Wang, W. Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs (100) substrates. J. Appl. Phys. 100, 103503 (2006).
Spitzer, N. et al. Telecom O-band quantum dots fabricated by droplet etching. Crystals 14, 1014 (2024).
Kersting, E. et al. Shutter-synchronized molecular beam epitaxy for wafer-scale homogeneous GaAs and telecom wavelength quantum emitter growth. Nanomaterials 15, 157 (2025).
Jang, Y. et al. The energy level spacing from InAs/GaAs quantum dots: its relation to the emission wavelength, carrier lifetime, and zero dimensionality. J. Appl. Phys. 99, 096101 (2006).
Löbl, M. C. et al. Excitons in InGaAs quantum dots without electron wetting layer states. Commun. Phys. 2, 93 (2019).
Chin, M.-K. & Luo, C.-P. Photoluminescence study of interface microroughness and exciton transfer in growth-interrupted single quantum wells. J. Lumin. 79, 233–240 (1998).
Oskooi, A. F. et al. MEEP: a flexible free-software package for electromagnetic simulations by the fdtd method. Comput. Phys. Commun. 181, 687–702 (2010).
Albrechtsen, M. et al. Data and analysis scripts for: A quantum-coherent photon–emitter interface in the original telecom band. ERDA https://doi.org/10.17894/ucph.bea2b48f-8c09-40f1-b867-aeb4a87958b8 (2026).