Optimizing Oxide Interfaces To Preserve Device Performance in TMDC-based Transistors (imec, ETH Zurich)

A new technical paper, “Oxide induced degradation in MoS2 field-effect transistors,” was published by researchers at imec and ETH Zurich.

Abstract excerpt
“Transition Metal Dichalcogenides (TMDC) are promising candidates for future scaled transistor channels but their performance is often degraded by imperfections such as the interface with amorphous gate oxides. This study examines how amorphous Al2O3 and HfO2 interfaces affect monolayer to trilayer MoS2 transistors using first principles simulations.”

Find the technical paper here. March 2026.

Ducry, F., Van Troeye, B., Dossena, M. et al. Oxide induced degradation in MoS2 field-effect transistors. npj 2D Mater Appl (2026). https://doi.org/10.1038/s41699-026-00677-2. Creative commons license.