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amorphous oxide

1 post
ZZürich
Reticle Placements To Achieve Efficient NW Topologies (ETH Zurich)
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Optimizing Oxide Interfaces To Preserve Device Performance in TMDC-based Transistors (imec, ETH Zurich)

  • 2026-03-17
A new technical paper, “Oxide induced degradation in MoS2 field-effect transistors,” was published by researchers at imec and…
Switzerland
www.europesays.com